PSMN017-30EL_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel 30 V 17 mΩ logic level MOSFET in I2PAK

PSMN017-30EL
N-channel 30 V 17 mΩ logic level MOSFET in I2PAK
Rev. 2 — 3 April 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
 High efficiency due to low switching
and conduction losses
 Suitable for logic level gate drive
sources
1.3 Applications
 DC-to-DC converters
 Load switching
 Motor control
 Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
V_DS
I_D
Parameter
drain-source voltage
drain current
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
Min
-
[1] _-
P_tot
total power dissipation
T_mb = 25 °C; see Figure 2
-
T_j
junction temperature
-55
Static characteristics
R_DSon
drain-source on-state resistance V_GS = 4.5 V; I_D = 10 A; T_j = 25 °C;
-
see Figure 13
V_GS = 10 V; I_D = 10 A; T_j = 25 °C;
-
see Figure 13
Dynamic characteristics
Q_GD
gate-drain charge
Q_G(tot)
total gate charge
Avalanche ruggedness
V_GS = 4.5 V; I_D = 10 A; V_DS = 15 V;
-
see Figure 14; see Figure 15
-
E_DS(AL)S
non-repetitive drain-source
avalanche energy
V_GS = 10 V; T_j(init) = 25 °C; I_D = 32 A;
-
V_sup ≤ 30 V; R_GS = 50 Ω; unclamped
[1] Continuous current is limited by package.
Typ Max Unit
-
30 V
-
32 A
-
47 W
-
175 °C
18.7 23.4 mΩ
13.4 17
mΩ
1.94 -
nC
5.1 -
nC
-
13 mJ