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PMV40UN Datasheet, PDF (5/12 Pages) NXP Semiconductors – TrenchMOS ultra low level FET
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Philips Semiconductors
PMV40UN
TrenchMOS™ ultra low level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 150 °C
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±8 V; VDS = 0 V
VGS = 4.5 V; ID = 2 A; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 2.5 V; ID = 1.5 A; Figure 7 and 8
VGS = 1.8 V; ID = 1 A; Figure 7 and 8
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 1 A; VDD = 15 V; VGS = 4.5 V;
Figure 13
VGS = 0 V; VDS = 30 V; f = 1 MHz;
Figure 11
VDD = 15 V; RL = 15 Ω;
VGS = 4.5 V; RG = 6 Ω
VSD
source-drain (diode forward) voltage IS = 1.25 A; VGS = 0 V; Figure 12
Min Typ Max Unit
30 -
-
V
27 -
-
V
V
0.45 0.7 -
V
0.25 0.4 -
V
-
-
1
µA
-
-
100 µA
-
10 100 nA
-
40 47 mΩ
-
68 79.9 mΩ
-
45 53 mΩ
-
55 73 mΩ
-
9.3 -
nC
-
0.7 -
nC
-
2.2 -
nC
-
445 -
pF
-
65 -
pF
-
50 -
pF
-
6
-
ns
-
12 -
ns
-
38 -
ns
-
12 -
ns
-
0.66 1.2 V
9397 750 11668
Product data
Rev. 01 — 05 August 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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