PMV40UN Datasheet, PDF (2/12 Pages) NXP Semiconductors – TrenchMOS ultra low level FET

Philips Semiconductors
PMV40UN
TrenchMOS™ ultra low level FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
PMV40UN
-
plastic surface mounted package; 3 leads
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
25 °C ≤ T_j ≤ 150 °C
25 °C ≤ T_j ≤ 150 °C; R_GS = 20 kΩ
T_sp = 25 °C; V_GS = 4.5 V; Figure 2 and 3
T_sp = 100 °C; V_GS = 4.5 V; Figure 2
T_sp = 25 °C; pulsed; t_p ≤ 10 µs; Figure 3
T_sp = 25 °C; Figure 1
I_S
source (diode forward) current (DC) T_sp = 25 °C
I_SM
peak source (diode forward) current T_sp = 25 °C; pulsed; t_p ≤ 10 µs
Version
SOT23
Min
Max Unit
-
30
V
-
30
V
-
±8
V
-
4.9
A
-
3.1
A
-
19.6 A
-
1.9
W
−55
+150 °C
−55
+150 °C
-
1.6
A
-
6.4
A
9397 750 11668
Product data
Rev. 01 — 05 August 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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