PMEG4010ETP Datasheet, PDF (5/14 Pages) NXP Semiconductors – 40 V, 1 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG4010ETP
40 V, 1 A low VF MEGA Schottky barrier rectifier
10³
Z_th(j-a)
(K/W)
10²
10
1
duty cycle =
1
0.75
0.5
0.33
0.25 _0.2
0.1
0.05
0.02 _0.01
0
006aab376
10^−1
10^−3
10^−2
10^−1
1
10
10²
10³
t_p (s)
Ceramic PCB, Al₂O₃, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
V_F
Characteristics
Parameter
forward voltage
I_R
reverse current
C_d
diode capacitance
Conditions
I_F = 0.1 A; T_j = 25 °C
I_F = 1 A; T_j = 25 °C
I_F = 1 A; T_j = 125 °C
V_R = 10 V; T_j = 25 °C
V_R = 40 V; T_j = 25 °C
V_R = 10 V; T_j = 125 °C
V_R = 40 V; T_j = 125 °C
V_R = 1 V; f = 1 MHz; T_j = 25 °C
V_R = 10 V; f = 1 MHz; T_j = 25 °C
Min Typ Max Unit
-
310 360 mV
-
430 490 mV
-
330 380 mV
-
3
13 µA
-
10
50
µA
-
2
-
mA
-
6
-
mA
-
130 -
pF
-
50
-
pF
PMEG4010ETP
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 5 October 2011
© NXP B.V. 2011. All rights reserved.
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