PMEG4010ETP Datasheet, PDF (1/14 Pages) NXP Semiconductors – 40 V, 1 A low VF MEGA Schottky barrier rectifier

PMEG4010ETP
40 V, 1 A low VF MEGA Schottky barrier rectifier
Rev. 1 — 5 October 2011
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
 Average forward current: I_F(AV) ≤ 1 A
 Reverse voltage: V_R ≤ 40 V
 Low forward voltage
 High power capability due to
clip-bonding technology
 Small and flat lead SMD plastic
package
 AEC-Q101 qualified
 High temperature T_j ≤ 175 °C
1.3 Applications
 Low voltage rectification
 High efficiency DC-to-DC conversion
 Switch mode power supply
 Reverse polarity protection
 Low power consumption applications
 High temperature applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
I_F(AV)
average forward
square wave; δ = 0.5; f = 20 kHz;
[1]
current
T_amb ≤ 145 °C
square wave; δ = 0.5; f = 20 kHz;
T_sp ≤ 165 °C
V_R
reverse voltage
T_j = 25 °C
V_F
forward voltage
I_F = 1 A; T_j = 25 °C
I_R
reverse current
V_R = 40 V; T_j = 25 °C
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
Min Typ Max Unit
-
-
1
A
-
-
1
A
-
-
40 V
-
430 490 mV
-
10
50
µA