PMCPB5530X_15 Datasheet, PDF (5/18 Pages) NXP Semiconductors – 20 V, complementary Trench MOSFET

NXP Semiconductors
PMCPB5530X
20 V, complementary Trench MOSFET
-10²
I_D
(A)
-10
Limit R_DSon = V_DS/I_D
017aaa410
(1)
-1
(2)
(3)
(4)
(5)
-10^-1
(6)
-10^-2
-10^-1
-1
-10
-10²
V_DS (V)
I_DM = single pulse
(1) t_p = 10 µs
(2) t_p = 100 µs
(3) DC; T_sp = 25 °C
(4) t_p = 10 ms
(5) t_p = 100 ms
(6) DC; T_amb = 25 °C; drain mounting pad 6 cm²
Fig 4. Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
TR1 (N-channel)
R_th(j-a)
thermal resistance
from junction to
ambient
Conditions
in free air
R_th(j-sp)
thermal resistance
from junction to solder
point
TR2 (P-channel)
R_th(j-a)
thermal resistance
from junction to
ambient
in free air
R_th(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1]
-
[2]
-
[3]
-
-
223 256 K/W
93
107 K/W
55
63
K/W
10
15
K/W
[1]
-
[2]
-
[3]
-
-
223 256 K/W
93
107 K/W
55
63
K/W
10
15
K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm².
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm², t ≤ 5 s.
PMCPB5530X
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 26 June 2012
© NXP B.V. 2012. All rights reserved.
5 of 18