PMCPB5530X_15 Datasheet, PDF (1/18 Pages) NXP Semiconductors – 20 V, complementary Trench MOSFET

PMCPB5530X
20 V, complementary Trench MOSFET
Rev. 1 — 26 June 2012
Product data sheet
1. Product profile
1.1 General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small
and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
package using Trench MOSFET technology.
1.2 Features and benefits
 Very fast switching
 Trench MOSFET technology
 Small and leadless ultra thin SMD
plastic package: 2 x 2 x 0.65 mm
 Exposed drain pad for excellent
thermal conduction
1.3 Applications
 Charging switch for portable devices
 DC-to-DC converters
 Small brushless DC motor drive
 Power management in battery-driven
portables
 Hard disc and computing power
management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
TR1 (N-channel), Static characteristics
R_DSon
drain-source on-state V_GS = 4.5 V; I_D = 3 A; T_j = 25 °C
resistance
-
26
34
mΩ
TR2 (P-channel), Static characteristics
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -3.4 A; T_j = 25 °C
resistance
-
55
70
mΩ
TR1 (N-channel)
V_DS
drain-source voltage T_j = 25 °C
-
-
20 V
V_GS
gate-source voltage
-12 -
12 V
I_D
drain current
V_GS = 4.5 V; T_amb = 25 °C; t ≤ 5 s
[1]
-
-
5.3 A