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| PHP98N03LT Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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Philips Semiconductors
PHP/PHB/PHD98N03LT
N-channel enhancement mode ï¬eld-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = â55 °C
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 175 °C
Tj = â55 °C
VDS = 25 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±15 V; VDS = 0 V
VGS = 5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Tj = 175 °C
VGS = 10 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
turn-on rise time
td(off)
turn-off delay time
tf
turn-off fall time
Source-drain diode
ID = 50 A; VDD = 15 V; VGS = 5 V; Figure 13
VGS = 0 V; VDS = 20 V; f = 1 MHz; Figure 11
VDD = 15 V; ID = 12.5 A; VGS = 5 V;
RG = 5.6 â¦; resistive load
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12
trr
reverse recovery time
IS = 10 A; dIS/dt = â100 A/µs; VGS = 0 V
Qr
recovered charge
Min Typ Max Unit
25 -
-
V
22 -
-
V
1 1.5 2 V
0.5 -
-
V
-
-
2.3 V
-
0.05 1 µA
-
-
500 µA
-
10 100 nA
-
6.2 7.3 mâ¦
-
10.5 12.4 mâ¦
-
5.2 5.9 mâ¦
-
40 -
nC
-
16 -
nC
-
15 -
nC
-
3000 -
pF
-
710 -
pF
-
510 -
pF
-
18 -
ns
-
80 -
ns
-
104 -
ns
-
104 -
ns
-
0.9 1.2 V
-
37 -
ns
-
20 -
nC
9397 750 08726
Product data
Rev. 02 â 18 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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