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PHP98N03LT Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
Philips Semiconductors
PHP/PHB/PHD98N03LT
N-channel enhancement mode field-effect transistor
120
Pder
(%)
80
03aa16
120
Ider
(%)
80
03af00
40
40
0
0
50
100
150
200
Tmb (oC)
Pder = P-------P----t--o--t------- × 100%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
0
0
50
100
150
200
Tmb (ºC)
Ider = -I------I---D-------- × 100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
103
ID
(A) RDSon = VDS / ID
102
DC
10
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
03af02
1
1
10
VDS (V)
102
Tmb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08726
Product data
Rev. 02 — 18 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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