PHP5N40 Datasheet, PDF (5/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product specification
PHP5N40
15 ^{VGS, Gate-Source voltage (Volts)}
ID = 3.5 A
Tj = 25 C
240 V
PHP5N40
80 V
VDD = 320 V
10
5
0
0
10 20 30 40 50 60 70 80
Qg, Gate charge (nC)
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); parameter V_DS
1000 ^{Switching times (ns)}
VDD = 200 V
VGS = 10 V
RD = 57 Ohms
ID = 3.5 A
Tj = 25 C
100 _td(off)
tf
tr
PHP5N40
td(on)
10
0
10
20
30
40
50
60
RG, Gate resistance (Ohms)
Fig.14. Typical switching times.
t_d(on), t_r, t_d(off), t_f = f(R_G)
Normalised Drain-source breakdown voltage
1.15
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
1.1
1.05
1
0.95
0.9
0.85
-100
-50
0
50
100
150
Tj, Junction temperature (C)
Fig.15. Normalised drain-source breakdown voltage.
V_(BR)DSS/V_{(BR)DSS 25 ˚C} = f(T_j)
20 ^{IF, Source-Drain diode current (Amps)}
VGS = 0 V
15
PHP5N40
10
150 C
Tj = 25 C
5
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4
VSDS, Source-Drain voltage (Volts)
Fig.16. Source-Drain diode characteristic.
I_F = f(V_SDS); parameter T_j
EAS, Normalised unclamped inductive energy (%)
120
110
100
90
80
70
60
50
40
30
20
10
0
20
40
60
80 100 120 140
Starting Tj ( C)
Fig.17. Normalised unclamped inductive energy.
E_AS% = f(T_j)
VGS
0
RGS
L
VDS
T.U.T.
+ ^VDD
-
-ID/100
R 01
shunt
Fig.18. Unclamped inductive test circuit.
E_AS = 0.5 ⋅ LI_D² ⋅ V_(BR)DSS/(V_(BR)DSS − V_DD)
February 1997
5
Rev 1.000