PHP5N40 Datasheet, PDF(2/7 Page) NXP Semiconductors – PowerMOS transistor

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PHP5N40 Datasheet, PDF (2/7 Pages) NXP Semiconductors – PowerMOS transistor

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Philips Semiconductors

PowerMOS transistor

Product specification

PHP5N40

ELECTRICAL CHARACTERISTICS

Tj = 25 ËC unless otherwise specified

SYMBOL PARAMETER

V(BR)DSS

âV(BR)DSS /

âTj

RDS(ON)

VGS(TO)

gfs

IDSS

Drain-source breakdown

voltage

Drain-source breakdown

voltage temperature coefficient

Drain-source on resistance

Gate threshold voltage

Forward transconductance

Drain-source leakage current

IGSS

Qg(tot)

Qgs

Qgd

td(on)

tr

td(off)

tf

Ld

Gate-source leakage current

Total gate charge

Gate-source charge

Gate-drain (Miller) charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Internal drain inductance

Ld

Internal drain inductance

Ls

Internal source inductance

Ciss

Input capacitance

Coss

Output capacitance

Crss

Feedback capacitance

CONDITIONS

VGS = 0 V; ID = 0.25 mA

VDS = VGS; ID = 0.25 mA

VGS = 10 V; ID = 3.3 A

VDS = VGS; ID = 0.25 mA

VDS = 30 V; ID = 3.3 A

VDS = 400 V; VGS = 0 V

VDS = 320 V; VGS = 0 V; Tj = 125 ËC

VGS = Â±30 V; VDS = 0 V

ID = 3.5 A; VDD = 320 V; VGS = 10 V

VDD = 200 V; ID = 10 A;

RG = 12 â¦; RD = 57 â¦

Measured from contact screw on

tab to centre of die

Measured from drain lead 6 mm

from package to centre of die

Measured from source lead 6 mm

from package to source bond pad

VGS = 0 V; VDS = 25 V; f = 1 MHz

MIN.

400

-

-

2.0

2

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TYP. MAX. UNIT

-

-

V

0.45 - V/K

0.7 1

â¦

3.0 4.0 V

4

-

S

1

25 ÂµA

40 250 ÂµA

10 200 nA

52 62 nC

3

5

nC

26 30 nC

12

-

ns

33

-

ns

93

-

ns

42

-

ns

3.5

-

nH

4.5

-

nH

7.5

-

nH

620 -

pF

108 -

pF

63

-

pF

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 ËC unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

IS

Continuous source current

Tmb = 25ËC

(body diode)

ISM

Pulsed source current (body Tmb = 25ËC

diode)

VSD

Diode forward voltage

IS = 5.5 A; VGS = 0 V

trr

Reverse recovery time

IS = 3.5 A; VGS = 0 V;

dI/dt = 100 A/Âµs

Qrr

Reverse recovery charge

MIN. TYP. MAX. UNIT

-

-

7.2 A

-

-

29

A

-

-

1.2 V

- 270 -

ns

-

3.3

-

ÂµC

February 1997

2

Rev 1.000

▷