PHP33N10 Datasheet, PDF (5/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product specification
PHP33N10
VGS / V
12
10
BUK456-100
VDS / V =20
8
80
6
4
2
0
0
20
40
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); parameter V_DS
Normalised Drain-source breakdown voltage
1.15
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
1.1
1.05
1
0.95
0.9
0.85
-100
-50
0
50
100
150
Tj, Junction temperature (C)
Fig.14. Normalised drain-source breakdown voltage.
V_(BR)DSS/V_{(BR)DSS 25 ˚C} = f(T_j)
IF / A
70
BUK456-100A
60
50
40
Tj / C = 150
25
30
20
10
0
0
1
2
VSDS / V
Fig.15. Source-Drain diode characteristic.
I_F = f(V_SDS); parameter T_j
EAS, Normalised unclamped inductive energy (%)
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Starting Tj ( C)
Fig.16. Normalised unclamped inductive energy.
E_AS% = f(T_j)
VGS
0
RGS
L
VDS
T.U.T.
+ ^VDD
-
-ID/100
R 01
shunt
Fig.17. Unclamped inductive test circuit.
E_AS = 0.5 ⋅ LI_D² ⋅ V_(BR)DSS/(V_(BR)DSS − V_DD)
April 1998
5
Rev 1.100