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PHP33N10 Datasheet, PDF (2/7 Pages) NXP Semiconductors – PowerMOS transistor
Philips Semiconductors
PowerMOS transistor
Product specification
PHP33N10
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
∆V(BR)DSS /
∆Tj
RDS(ON)
VGS(TO)
gfs
IDSS
Drain-source breakdown
voltage
Drain-source breakdown
voltage temperature coefficient
Drain-source on resistance
Gate threshold voltage
Forward transconductance
Drain-source leakage current
IGSS
Qg(tot)
Qgs
Qgd
td(on)
tr
td(off)
tf
Ld
Gate-source leakage current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 0.25 mA
VGS = 10 V; ID = 17 A
VDS = VGS; ID = 0.25 mA
VDS = 50 V; ID = 17 A
VDS = 100 V; VGS = 0 V
VDS = 80 V; VGS = 0 V; Tj = 150 ˚C
VGS = ±30 V; VDS = 0 V
ID = 17 A; VDD = 80 V; VGS = 10 V
VDD = 50 V; ID = 17 A;
RG = 9.1 Ω; RD = 2.9 Ω
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
VGS = 0 V; VDS = 25 V; f = 1 MHz
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IS
Continuous source current
Tmb = 25˚C
(body diode)
ISM
Pulsed source current (body Tmb = 25˚C
diode)
VSD
Diode forward voltage
IS = 34 A; VGS = 0 V
trr
Reverse recovery time
IS = 17 A; VGS = 0 V;
dI/dt = 100 A/µs
Qrr
Reverse recovery charge
MIN. TYP. MAX. UNIT
100 -
-
V
- 0.15 - V/K
- 0.052 0.057 Ω
2.0 3.0 4.0 V
12 16
-
S
-
1
25 µA
-
100 250 µA
-
10 100 nA
-
42 50 nC
-
8
11 nC
-
20 30 nC
-
18
-
ns
-
40
-
ns
- 125 -
ns
-
50
-
ns
-
3.5
-
nH
-
4.5
-
nH
-
7.5
-
nH
- 1500 -
pF
- 450 -
pF
- 130 -
pF
MIN. TYP. MAX. UNIT
-
-
34
A
-
- 136 A
-
-
1.5 V
- 200 -
ns
-
1.0
-
µC
April 1998
2
Rev 1.100