PHP24N03LT Datasheet, PDF (5/6 Pages) NXP Semiconductors – TrenchMOS transistor Logic level FET

Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
PHP24N03LT, PHB24N03LT
a
2
30V TrenchMOS
1.5
1
0.5
0
-100
-50
0
50
100
150
200
Tj / C
Fig.9. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 12 A; V_GS = 5 V
VGS(TO) / V
2.5
max.
2
typ.
1.5
min.
1
BUK959-60
0.5
0
-100
-50
0
50
Tj / C
100
150
200
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
1E-01
Sub-Threshold Conduction
1E-02
1E-03
2%
typ
98%
1E-04
1E-05
1E-05
0
0.5
1
1.5
2
2.5
3
Fig.11. Sub-threshold drain current.
I_D = f(V_GS); conditions: T_j = 25 ˚C; V_DS = V_GS
Capacitances Ciss, Coss, Crss (pF)
1000
PHP24N03LT
Ciss
100
Coss
Crss
Tj = 25 C
10
1
10
100
Drain-source voltage, VDS (V)
1000
Fig.12. Typical capacitances, C_iss, C_oss, C_rss.
C = f(V_DS); conditions: V_GS = 0 V; f = 1 MHz
VGS, Gate-Source voltage (Volts)
15
VDD = 30 V
ID = 10 A
Tj = 25 C
10
PHP24N03LT
5
0
0
5
10
15
20
25
Qg, Gate charge (nC)
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); parameter V_DS
Source-Drain diode current, IF(A)
20
VGS = 0 V
15
PHP24N03LT
10
175 C
Tj = 25 C
5
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4
Source-Drain voltage, VSDS (V)
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); parameter T_j
January 1998
5
Rev 1.300