PHP24N03LT Datasheet, PDF (4/6 Pages) NXP Semiconductors – TrenchMOS transistor Logic level FET

Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
PHP24N03LT, PHB24N03LT
100 ^{ID, Drain current (Amps)}
RDS(ON) ^{= VDS/ID}
10
DC
PHP24N03T
10 us
100 us
1 ms
10 ms
Tmb = 25 C
1
1
10
100
VDS, Drain-source voltage (Volts)
Fig.3. Safe operating area. T_mb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Transient thermal impedance, Zth j-mb (K/W) PHP24N03T
10
D=
0.5
1
0.2
0.1
0.05
0.1 _0.02
0
P_D
tp
D
=
tp
T
T
t
0.01
1us 10us 100us 1ms 10ms 0.1s 1s 10s
pulse width, tp (s)
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
ID, Drain current (Amps)
20
5V
15 V
15
10
PHP24N03LT
3.5 V
3V
5
VGS = 2.5 V
Tj = 25 C
0
0
5
10
15
20
25
30
VDS, Drain-Source voltage (Volts)
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
0.12 ^{RDS(on), Drain-Source on resistance (Ohms) PHP24N03LT}
VGS = 2.5 V
3V
0.1
0.08
3.5 V
0.06
5V
0.04
15 V
0.02
Tj = 25 C
0
0
5
10
15
20
ID, Drain current (Amps)
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
20 ^{Drain current, ID (A)}
VDS = 25 V
15
PHP24N03LT
10
5
175 C
Tj = 25 C
0
0
1
2
3
4
5
Gate-source voltage, VGS (V)
Fig.7. Typical transfer characteristics.
I_D = f(V_GS); parameter T_j
15 ^{Transconductance, gfs (S)}
VDS = 25 V
10
PHP24N03LT
Tj = 25 C
175 C
5
0
0
5
10
15
20
Drain current, ID (A)
Fig.8. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D)
January 1998
4
Rev 1.300