PDTC143XMB_15 Datasheet, PDF (5/11 Pages) NXP Semiconductors – NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ

NXP Semiconductors
PDTC143XMB
NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ
10³
h_FE
10²
10
006aac841
(1)
(2)
(3)
1
V_CEsat
(V)
10^-1
006aac842
(1)
(2)
(3)
1
10^-1
1
10
10²
I_C (mA)
V_CE = 5 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = -40 °C
Fig 4. DC current gain as a function of collector
current; typical values
006aac843
10
V_I(on)
(V)
1
(1)
(2)
(3)
10^-2
1
10
10²
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = -40 °C
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac844
10
V_I(off)
(V)
1
(1)
(2)
(3)
10^-1
10^-1
1
10
10²
I_C (mA)
V_CE = 0.3 V
(1) T_amb = -40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 6. On-state input voltage as a function of collector
current; typical values
10^-1
10^-1
1
10
I_C (mA)
V_CE = 5 V
(1) T_amb = -40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 7. Off-state input voltage as a function of collector
current; typical values
PDTC143XMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 7 June 2012
© NXP B.V. 2012. All rights reserved.
5 of 11