PDTC143XMB_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ

PDTC143XMB
NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ
Rev. 1 — 7 June 2012
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B
Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA143XMB.
1.2 Features and benefits
 100 mA output current capability
 Reduces component count
 Built-in bias resistors
 Reduces pick and place costs
 Simplifies circuit design
 AEC-Q101 qualified
 Leadless ultra small SMD plastic
package
 Low package height of 0.37 mm
1.3 Applications
 Low-current peripheral driver
 Control of IC inputs
 Replaces general-purpose transistors
in digital applications
 Mobile applications
1.4 Quick reference data
Table 1.
Symbol
V_CEO
I_O
R1
R2/R1
Quick reference data
Parameter
collector-emitter
voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
T_amb = 25 °C
Min Typ Max Unit
-
-
50 V
-
-
100 mA
3.3 4.7 6.1 kΩ
1.7 2.1 2.6