PDTC143X Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW

Philips Semiconductors
PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
R_th(j-a)
thermal resistance from in free air
junction to ambient
SOT416
[1] _-
-
833
SOT490
[1] [2] _-
-
500
SOT346
[1] _-
-
500
SOT883
[2] [3] _-
-
500
SOT54
[1] _-
-
250
SOT23
[1] _-
-
500
SOT323
[1] _-
-
625
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
7. Characteristics
Unit
K/W
K/W
K/W
K/W
K/W
K/W
K/W
Table 8: Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
I_CBO
collector-base cut-off V_CB = 50 V; I_E = 0 A
current
I_CEO
collector-emitter
cut-off current
V_CE = 30 V; I_B = 0 A
V_CE = 30 V; I_B = 0 A;
T_j = 150 °C
I_EBO
emitter-base cut-off V_EB = 5 V; I_C = 0 A
current
h_FE
V_CEsat
DC current gain
collector-emitter
saturation voltage
V_CE = 5 V; I_C = 10 mA
I_C = 10 mA; I_B = 0.5 mA
V_I(off)
V_I(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
V_CE = 5 V; I_C = 100 µA
V_CE = 300 mV; I_C = 20 mA
R2/R1 bias resistor ratio
C_c
collector capacitance V_CB = 10 V; I_E = i_e = 0 A;
f = 1 MHz
Min Typ Max Unit
-
-
100 nA
-
-
1
µA
-
-
50 µA
-
-
600 µA
50 -
-
-
-
100 mV
-
-
0.3 V
2.5 -
-
V
3.3 4.7 6.1 kΩ
1.7 2.1 2.6
-
-
2.5 pF
PDTC143X_SER_9
Product data sheet
Rev. 09 — 26 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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