PDTC143X Datasheet, PDF (4/12 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW

Philips Semiconductors
PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V_CBO
collector-base voltage
open emitter
-
50
V
V_CEO
collector-emitter voltage open base
-
50
V
V_EBO
emitter-base voltage
open collector
-
7
V
V_I
input voltage
positive
-
+20
V
negative
-
−7
V
I_O
output current
-
100
mA
I_CM
peak collector current
single pulse;
t_p ≤ 1 ms
-
100
mA
P_tot
total power dissipation
T_amb ≤ 25 °C
SOT416
[1] _-
150
mW
SOT490
[1] [2] _-
250
mW
SOT346
[1] _-
250
mW
SOT883
[2] [3] _-
250
mW
SOT54
[1] _-
500
mW
SOT23
[1] _-
250
mW
SOT323
[1] _-
200
mW
T_stg
T_j
T_amb
storage temperature
junction temperature
ambient temperature
−65
+150
°C
-
150
°C
−65
+150
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
PDTC143X_SER_9
Product data sheet
Rev. 09 — 26 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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