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| PDTC143TMB_15 Datasheet, PDF (5/11 Pages) NXP Semiconductors – NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open | |||
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NXP Semiconductors
PDTC143TMB
NPN resistor-equipped transistor; R1 = 4.7 kâ¦, R2 = open
103
(1)
(2)
hFE
(3)
102
006aad070
10
10-1
1
10
102
IC (A)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
Fig 4. DC current gain as a function of collector
current; typical values
3
Cc
(pF)
2
006aad055
1
1
VCEsat
(V)
10-1
006aad071
(1)
(2)
(3)
10-2
10-1
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -40 °C
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values
103
006aac757
fT
(MHz)
102
0
0
10
20
30
40
50
VCB (V)
f = 1 MHz; Tamb = 25 °C
Fig 6. Collector capacitance as a function of
collector-base voltage; typical values of built-in
transistor
10
10-1
1
10
102
IC (mA)
VCE = 5 V; Tamb = 25 °C
Fig 7. Transition frequency as a function of collector
current; typical values of built-in transistor
PDTC143TMB
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 4 May 2012
© NXP B.V. 2012. All rights reserved.
5 of 11
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