PDTC123J Datasheet, PDF(5/14 Page) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM

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PDTC123J Datasheet, PDF (5/14 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM

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Philips Semiconductors

NPN resistor-equipped transistors;

R1 = 2.2 kâ¦, R2 = 47 kâ¦

Product speciï¬cation

PDTC123J series

CHARACTERISTICS

Tamb = 25 Â°C unless otherwise speciï¬ed.

SYMBOL

PARAMETER

CONDITIONS

ICBO

ICEO

IEBO

hFE

VCEsat

Vi(off)

Vi(on)

collector-base cut-off current

collector-emitter cut-off current

emitter-base cut-off current

DC current gain

collector-emitter saturation voltage

input-off voltage

input-on voltage

input resistor

VCB = 50 V; IE = 0

VCE = 30 V; IB = 0

VCE = 30 V; IB = 0; Tj = 150 Â°C

VEB = 5 V; IC = 0

VCE = 5 V; IC = 10 mA

IC = 5 mA; IB = 0.25 mA

IC = 100 ÂµA; VCE = 5 V

IC = 5 mA; VCE = 0.3 V

RR-----21--

resistor ratio

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

MIN.

100

1.1

1.54

TYP.

0.6

0.75

2.2

MAX.

100

180

100

0.5

2.86

UNIT

ÂµA

kâ¦

2.5 pF

2004 Aug 13

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