PDTC123J Datasheet, PDF (2/14 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM

Philips Semiconductors
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
Product specification
PDTC123J series
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_CEO
collector-emitter
voltage
I_O
output current (DC)
R1
bias resistor
R2
bias resistor
TYP.
−
−
2.2
47
MAX. UNIT
50 V
100 mA
−
kΩ
−
kΩ
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PDTC123JE
PDTC123JEF
PDTC123JK
PDTC123JM
PDTC123JS
PDTC123JT
PDTC123JU
PACKAGE
PHILIPS
EIAJ
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
SC-75
SC-89
SC-59
SC-101
SC-43
−
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE PNP COMPLEMENT
28
28
49
DW
TC123J
*25⁽¹⁾
*49⁽¹⁾
PDTA123JE
PDTA123JEF
PDTA123JK
PDTA123JM
PDTA123JS
PDTA123JT
PDTA123JU
2004 Aug 13
2