PDTC115E Datasheet, PDF (5/14 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

Philips Semiconductors
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
Product specification
PDTC115E series
THERMAL CHARACTERISTICS
SYMBOL
R_th(j-a)
PARAMETER
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT416
SOT833
SOT490
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 2 and 3
notes 1 and 2
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.
VALUE
250
500
500
625
833
500
500
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
V_i(off)
V_i(on)
R1
RR-----21--
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
V_CB = 50 V; I_E = 0 A
V_CE = 30 V; I_B = 0 A
V_CE = 30 V; I_B = 0 A; T_j = 150 °C
V_EB = 5 V; I_C = 0 A
V_CE = 5 V; I_C = 5 mA
I_C = 5 mA; I_B = 0.25 mA
I_C = 100 µA; V_CE = 5 V
I_C = 1 mA; V_CE = 0.3 V
C_c
collector capacitance
I_E = i_e = 0 A; V_CB = 10 V;
f = 1 MHz
MIN.
−
−
−
−
80
−
−
3
70
0.8
TYP.
−
−
−
−
−
−
1.1
1.5
100
1
MAX.
100
1
50
50
−
150
0.5
−
130
1.2
UNIT
nA
µA
µA
µA
mV
V
V
kΩ
−
−
2.5 pF
2004 Aug 06
5