PDTC115E Datasheet, PDF (2/14 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW

Philips Semiconductors
NPN resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
Product specification
PDTC115E series
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_CEO
collector-emitter
voltage
I_O
output current (DC)
R1
bias resistor
R2
bias resistor
TYP.
−
−
100
100
MAX. UNIT
50 V
20 mA
−
kΩ
−
kΩ
DESCRIPTION
NPN resistor equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PDTC115EE
PDTC115EEF
PDTC115EK
PDTC115EM
PDTC115ES
PDTC115ET
PDTC115EU
PACKAGE
PHILIPS
EIAJ
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
SC-75
SC-89
SC-59
SC-101
SC-43
−
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE PNP COMPLEMENT
46
49
56
DV
TC115E
*44⁽¹⁾
*15⁽¹⁾
PDTA115EE
PDTA115EEF
PDTA115EK
PDTA115EM
PDTA115ES
PDTA115ET
PDTA115EU
2004 Aug 06
2