PDTA143Z Datasheet, PDF (5/14 Pages) NXP Semiconductors – PNP resistor-equipped transistors R1 = 4.7 kW, R2 = 47 kW

Philips Semiconductors
PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 47 kΩ
Product specification
PDTA143Z series
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
V_i(off)
V_i(on)
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
V_CB = −50 V; I_E = 0
V_CE = −30 V; I_B = 0
V_CE = −30 V; I_B = 0; T_j = 150 °C
V_EB = −5 V; I_C = 0
V_CE = −5 V; I_C = −10 mA
I_C = −5 mA; I_B = −0.25 mA
I_C = −100 µA; V_CE = −5 V
I_C = −5 mA; V_CE = −0.3 V
−
−
−
−
100
−
−
−1.3
3.3
−
−
−
−
−
−
−0.6
−0.9
4.7
−100 nA
−1
µA
−50 µA
−170 µA
−
−100 mV
−0.5 V
−
V
6.1 kΩ
RR-----21--
resistor ratio
8
10
12
C_c
collector capacitance
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz −
−
3
pF
2004 Aug 05
5