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PDTA143Z Datasheet, PDF (2/14 Pages) NXP Semiconductors – PNP resistor-equipped transistors R1 = 4.7 kW, R2 = 47 kW | |||
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Philips Semiconductors
PNP resistor-equipped transistors;
R1 = 4.7 kâ¦, R2 = 47 kâ¦
Product speciï¬cation
PDTA143Z series
FEATURES
⢠Built-in bias resistors
⢠Simplified circuit design
⢠Reduction of component count
⢠Reduced pick and place costs.
APPLICATIONS
⢠General purpose switching and amplification
⢠Inverter and interface circuits
⢠Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VCEO
collector-emitter
voltage
IO
output current (DC)
R1
bias resistor
R2
bias resistor
TYP.
â
â
4.7
47
MAX. UNIT
â50 V
â100 mA
â
kâ¦
â
kâ¦
DESCRIPTION
PNP resistor-equipped transistor (see âSimplified outline,
symbol and pinningâ for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PDTA143ZE
PDTA143ZEF
PDTA143ZK
PDTA143ZM
PDTA143ZS
PDTA143ZT
PDTA143ZU
PACKAGE
PHILIPS
EIAJ
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
SC-75
SC-89
SC-59
SC-101
SC-43
â
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE NPN COMPLEMENT
37
52
19
DP
TA143Z
*19(1)
*47(1)
PDTC143ZE
PDTC143ZEF
PDTC143ZK
PDTC143ZM
PDTC143ZS
PDTC143ZT
PDTC143ZU
2004 Aug 05
2
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