PDTA114T Datasheet, PDF (5/14 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = open

Philips Semiconductors
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
Product specification
PDTA114T series
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
R1
C_c
collector-base cut-off current
collector-emitter cut-off current
V_CB = −50 V; I_E = 0
V_CE = −30 V; I_B = 0
−
−
−
−
emitter-base cut-off current
DC current gain
V_CE = −30 V; I_B = 0; T_j = 150 °C −
−
V_EB = −5 V; I_C = 0
−
−
V_CE = −5 V; I_C = −1 mA
200 −
collector-emitter saturation voltage I_C = −10 mA; I_B = −0.5 mA
−
−
input resistor
7
10
collector capacitance
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz −
−
−100 nA
−1
µA
−50 µA
−100 nA
−
−150 mV
13
kΩ
3
pF
2004 Aug 02
5