PDTA114T Datasheet, PDF (2/14 Pages) NXP Semiconductors – PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = open

Philips Semiconductors
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = open
Product specification
PDTA114T series
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_CEO
collector-emitter
voltage
I_O
output current (DC)
R1
bias resistor
R2
open
TYP.
−
−
10
−
MAX. UNIT
−50 V
−100 mA
−
kΩ
−
−
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PDTA114TE
PDTA114TEF
PDTA114TK
PDTA114TM
PDTA114TS
PDTA114TT
PDTA114TU
PACKAGE
PHILIPS
EIAJ
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
SC-75
SC-89
SC-59
SC-101
SC-43
−
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE NPN COMPLEMENT
11
46
23
DE
TA114T
*11⁽¹⁾
*23⁽¹⁾
PDTC114TE
PDTC114TEF
PDTC114TK
PDTC114TM
PDTC114TS
PDTC114TT
PDTC114TU
2004 Aug 02
2