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PBSS4330PA_15 Datasheet, PDF (5/16 Pages) NXP Semiconductors – 30 V, 3 A NPN low VCEsat (BISS) transistor
NXP Semiconductors
PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab980
10- 1
10- 5
10- 4
10- 3
10- 2
10- 1
1
FR4 PCB, mounting pad for collector 1 cm2
10
102
103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
006aac000
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
1
0
0.02
0.01
10- 1
10- 5
10- 4
10- 3
10- 2
10- 1
1
FR4 PCB, mounting pad for collector 6 cm2
10
102
103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4330PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 April 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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