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PBSS4330PA_15 Datasheet, PDF (1/16 Pages) NXP Semiconductors – 30 V, 3 A NPN low VCEsat (BISS) transistor | |||
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PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
7 April 2015
Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an
ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
PNP complement: PBSS5330PA.
2. Features and benefits
⢠Low collector-emitter saturation voltage VCEsat
⢠High collector current capability IC and ICM
⢠Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
⢠Exposed heat sink for excellent thermal and electrical conductivity
⢠Leadless small SMD plastic package with medium power capability
3. Applications
⢠Loadswitch
⢠Battery-driven devices
⢠Power management
⢠Charging circuits
⢠Power switches (e.g. motors, fans)
4. Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current single pulse; tp ⤠1 ms
collector-emitter
saturation resistance
IC = 3 A; IB = 300 mA; pulsed;
tp ⤠300 µs; δ ⤠0.02 ; Tamb = 25 °C
Min Typ Max Unit
-
-
30
V
-
-
3
A
-
-
5
A
-
75
100 mΩ
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