PBHV9215Z Datasheet, PDF (5/12 Pages) NXP Semiconductors – 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor

NXP Semiconductors
PBHV9215Z
150 V, 2 A PNP high-voltage low V_CEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
I_CBO
collector-base cut-off V_CB = −120 V; I_E = 0 A
-
current
V_CB = −120 V; I_E = 0 A;
-
T_j = 150 °C
I_CES
collector-emitter cut-off V_CE = −120 V; V_BE = 0 V
-
current
I_EBO
emitter-base cut-off
V_EB = −4 V; I_C = 0 A
-
current
h_FE
V_CEsat
R_CEsat
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
V_CE = −10 V
I_C = −100 mA
[1] ₁₀₀
I_C = −1 A
[1] ₈₀
I_C = −1.5 A
[1] ₇₀
I_C = −2 A
[1] ₆₀
I_C = −100 mA;
[1] _-
I_B = −20 mA
I_C = −1 A; I_B = −200 mA ^[1] -
I_C = − 1.5 A; I_B = −300 mA ^[1] -
I_C = −2 A; I_B = −400 mA ^[1] -
I_C = −2 A; I_B = −400 mA ^[1] -
V_BEsat
base-emitter saturation I_C = −2 A; I_B = −400 mA ^[1] -
voltage
t_d
delay time
t_r
rise time
V_CC = −6 V; I_C = −0.5 A;
-
I_Bon = −0.1 A; I_Boff = 0.1 A
-
t_on
turn-on time
-
t_s
storage time
-
t_f
fall time
-
t_off
turn-off time
-
f_T
transition frequency V_CE = −10 V;
-
I_E = −10 mA; f = 100 MHz
C_c
collector capacitance V_CB = −20 V; I_E = i_e = 0 A;
-
f = 1 MHz
C_e
emitter capacitance
V_EB = −0.5 V;
-
I_C = i_c = 0 A; f = 1 MHz
[1] Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
Typ Max Unit
-
−100 nA
-
−10 μA
-
−100 nA
-
−100 nA
180 -
155 -
140 -
120 -
−25 −50 mV
−110 −190 mV
−155 −270 mV
−200 −350 mV
100 175 mΩ
−1.0 −1.15 V
20 -
105 -
125 -
875 -
150 -
1025 -
35 -
ns
ns
ns
ns
ns
ns
MHz
30 -
pF
530 -
pF
PBHV9215Z_1
Product data sheet
Rev. 01 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
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