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PBHV9215Z Datasheet, PDF (1/12 Pages) NXP Semiconductors – 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor | |||
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PBHV9215Z
150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor
Rev. 01 â 11 December 2009
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8215Z.
1.2 Features
 High voltage
 Low collector-emitter saturation voltage VCEsat
 High collector current capability IC and ICM
 High collector current gain (hFE) at high IC
 AEC-Q101 qualified
 Medium power SMD plastic package
1.3 Applications
 LED driver for LED chain module
 LCD backlighting
 Automotive motor management
 Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
hFE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
[1] Pulse test: tp ⤠300 μs; δ ⤠0.02.
Conditions
open base
VCE = â10 V;
IC = â100 mA
Min Typ Max Unit
-
-
â150 V
-
-
â2 A
[1] 100 180 -
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