MMBZXAL_15 Datasheet, PDF (5/17 Pages) NXP Semiconductors – Low capacitance unidirectional double ESD protection diodes

NXP Semiconductors
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
T_j
junction temperature
-
T_amb
ambient temperature
−55
T_stg
storage temperature
−65
Max Unit
150
°C
+150 °C
+150 °C
[1] In accordance with IEC 61643-321 (10/1000 μs current waveform).
[2] Measured from pin 1 or 2 to pin 3.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and
standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².
Table 7. ESD maximum ratings
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
V_ESD
electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
machine model
Min
[1][2] _-
[2] _-
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 or 2 to pin 3.
Max Unit
30
kV
2
kV
Table 8. ESD standards compliance
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
MMBZXAL_SER_2
Product data sheet
Rev. 02 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
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