MMBZXAL_15 Datasheet, PDF (11/17 Pages) NXP Semiconductors – Low capacitance unidirectional double ESD protection diodes

NXP Semiconductors
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
10³
I_RM
(1)
(nA)
10²
006aab841
10
(2)
1
(3)
10^−1
10^−2
(4)
10^−3
10^−4
−75
−25
25
75
125
175
T_amb (°C)
(1) MMBZ5V6AL: V_RWM = 3 V
(2) MMBZ6V8AL: V_RWM = 4.5 V
(3) MMBZ9V1AL: V_RWM = 6 V
(4) MMBZ27VAL: V_RWM = 22 V
Fig 7. Reverse leakage current as a function of ambient temperature; typical values
I
I_PPM
I_PP
−V_CL −V_BR −V_RWM
V
−I_RM
−I_R
−+
P-N
−I_PP
−I_PPM
006aab324
Fig 8. V-I characteristics for a unidirectional
ESD protection diode
−V_CL −V_BR −V_RWM
I_R
I_RM
−I_RM
−I_R
V_RWM V_BR V_CL
−
+
−I_PP
−I_PPM
006aab325
Fig 9. V-I characteristics for a bidirectional
ESD protection diode
MMBZXAL_SER_2
Product data sheet
Rev. 02 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
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