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BYC8DX-600_15 Datasheet, PDF (5/11 Pages) NXP Semiconductors – Hyperfast power diode
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NXP Semiconductors
BYC8DX-600
Hyperfast power diode
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
VF
forward voltage
IR
reverse current
Dynamic characteristics
IF = 8 A; Tj = 150 °C; see Figure 4
IF = 8 A; Tj = 25 °C
VR = 500 V; Tj = 100 °C
VR = 600 V
Qr
recovered charge
IF = 1 A; VR = 100 V; dIF/dt = 100 A/µs
trr
reverse recovery time IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 100 °C
IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C
IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 25 °C; see Figure 5
IRM
peak reverse recovery IF = 10 A; VR = 400 V; dIF/dt = 500 A/µs;
current
Tj = 100 °C
IF = 8 A; VR = 400 V; dIF/dt = 50 A/µs;
Tj = 125 °C
VFR
forward recovery
IF = 10 A; dIF/dt = 100 A/µs; Tj = 25 °C;
voltage
see Figure 6
Min Typ Max Unit
-
1.5 1.85 V
-
2
2.9 V
-
1.1 3
mA
-
9
40 µA
-
13 -
nC
-
32
40
ns
-
30
52
ns
-
20
-
ns
-
9.5 12 A
-
1.5 5.5 A
-
8
10 V
20
IF
(A)
16
12
8
4
0
0
(1) (2)
1
2
003aac976
(3)
3
4
VF (V)
IF
dlF
dt
trr
Qr
IR
IRM
time
25 %
100 %
003aac562
Fig 4. Forward current as a function of forward
voltage
Fig 5. Reverse recovery definitions; ramp recovery
BYC8DX-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 December 2010
© NXP B.V. 2010. All rights reserved.
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