BYC8DX-600_15 Datasheet, PDF (1/11 Pages) NXP Semiconductors – Hyperfast power diode

BYC8DX-600
Hyperfast power diode
Rev. 01 — 27 December 2010
Product data sheet
1. Product profile
1.1 General description
Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features and benefits
 Isolated plastic package
 Low reverse recovery current
 Low thermal resistance
 Reduces switching losses in
associated MOSFET
1.3 Applications
 Continuous Current Mode (CCM)
Power Factor Correction (PFC)
 Half-bridge/full-bridge switched-mode
power supplies
 Half-bridge lighting ballasts
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_RRM
repetitive peak
reverse voltage
I_F(AV)
average forward
current
square-wave pulse; δ = 0.5 ;
T_h = 47 °C;
see Figure 1; see Figure 2
Static characteristics
V_F
forward voltage I_F = 8 A; T_j = 150 °C;
see Figure 4
Dynamic characteristics
I_F = 8 A; T_j = 25 °C
t_rr
reverse recovery I_F = 8 A; V_R = 400 V;
time
dI_F/dt = 500 A/µs; T_j = 25 °C;
see Figure 5
Min Typ Max Unit
-
-
600 V
-
-
8
A
-
1.5 1.85 V
-
2 2.9 V
-
20 -
ns