English
Language : 

BYC8-600P_15 Datasheet, PDF (5/9 Pages) NXP Semiconductors – Hyperfast power diode
◁
NXP Semiconductors
BYC8-600P
Hyperfast power diode
Symbol
IRM
Parameter
Conditions
IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
peak reverse recovery IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs;
current
Tj = 25 °C; Fig. 7
IF = 8 A; VR = 200 V; dIF/dt = 200 A/µs;
Tj = 125 °C; Fig. 7
Min Typ Max Unit
-
12
18
ns
-
-
2.2 A
-
-
6
A
16
IF
(A)
12
003aaj903
IF
dlF
dt
trr
8
(1)
(2)
(3)
4
0
0
1
2
3
4
VF (V)
Fig. 6. Forward current as a function of forward
voltage
time
25 %
Qr
100 %
IR
IRM
003aac562
Fig. 7. Reverse recovery definitions; ramp recovery
BYC8-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 January 2014
© NXP N.V. 2014. All rights reserved
5/9
 ▷