BYC8-600P_15 Datasheet, PDF (4/9 Pages) NXP Semiconductors – Hyperfast power diode

NXP Semiconductors
BYC8-600P
Hyperfast power diode
9. Thermal characteristics
Table 6.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient free air
Conditions
Fig. 5
in free air
Min Typ Max Unit
-
-
2.5 K/W
-
60
-
K/W
10
Z_th(j-mb)
(K/W)
1
001aag913
10^{- 1}
P
δ = ^tp
T
10^{- 2}
10^{- 3}
10^{- 6}
10^{- 5}
10^{- 4}
10^{- 3}
10^{- 2}
t_p
T
10^{- 1}
t
1 10
t_p (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse width
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V_F
forward voltage
I_F = 8 A; T_j = 25 °C; Fig. 6
I_F = 8 A; T_j = 125 °C; Fig. 6
I_F = 8 A; T_j = 150 °C
I_R
reverse current
V_R = 600 V; T_j = 25 °C
V_R = 600 V; T_j = 125 °C
Dynamic characteristics
Q_r
recovered charge
I_F = 8 A; V_R = 200 V; dI_F/dt = 200 A/µs;
T_j = 25 °C; Fig. 7
I_F = 8 A; V_R = 200 V; dI_F/dt = 200 A/µs;
T_j = 125 °C; Fig. 7
t_rr
reverse recovery time I_F = 8 A; V_R = 400 V; dI_F/dt = 500 A/µs;
T_j = 25 °C; Fig. 7
BYC8-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 January 2014
Min Typ Max Unit
-
-
3.4 V
-
1.5 1.9 V
-
1.4 -
V
-
-
20
µA
-
-
200 µA
-
17
-
nC
-
90
-
nC
-
19
-
ns
© NXP N.V. 2014. All rights reserved
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