BYC5D-500_15 Datasheet, PDF (5/11 Pages) NXP Semiconductors – BYC5D-500_15

NXP Semiconductors
BYC5D-500
Hyperfast power diode
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V_F
forward voltage
I_R
reverse current
Dynamic characteristics
I_F = 10 A; T_j = 150 °C; see Figure 5
I_F = 5 A; T_j = 25 °C; see Figure 5
I_F = 5 A; T_j = 150 °C; see Figure 5
V_R = 500 V
V_R = 500 V; T_j = 100 °C
t_rr
reverse recovery time I_F = 1 A; V_R = 30 V; dI_F/dt = 50 A/µs;
T_j = 25 °C; see Figure 6
I_F = 5 A; V_R = 400 V; dI_F/dt = 500 A/µs;
T_j = 25 °C; see Figure 6
I_RM
peak reverse recovery I_F = 5 A; V_R = 400 V; dI_F/dt = 50 A/µs;
current
T_j = 125 °C; see Figure 6
I_F = 5 A; V_R = 400 V; dI_F/dt = 500 A/µs;
T_j = 100 °C; see Figure 6
V_FR
forward recovery
I_F = 5 A; dI_F/dt = 100 A/µs; T_j = 25 °C;
voltage
see Figure 7
Min Typ Max Unit
-
1.4 1.7 V
-
1.5 2
V
-
1.15 1.45 V
-
9
40 µA
-
0.9 3
mA
-
15
30
ns
-
16
-
ns
-
0.9 3
A
-
9.5 11
A
-
9
11
V
10
I_F
(A)
8
6
4
2
0
0
003aag304
(1)
(2)
(3)
1
2
3
V_F (V)
I_F
dl_F
dt
t_rr
Q_r
I_R
I_RM
time
25 %
100 %
003aac562
Fig 5. Forward current as a function of forward
voltage
Fig 6. Reverse recovery definitions; ramp recovery
BYC5D-500
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 July 2011
© NXP B.V. 2011. All rights reserved.
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