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BYC30X-600P_15 Datasheet, PDF (5/9 Pages) NXP Semiconductors – Hyperfast power diode
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NXP Semiconductors
BYC30X-600P
Hyperfast power diode
Symbol
Parameter
Conditions
IF = 30 A; Tj = 150 °C; Fig. 6
IR
reverse current
VR = 600 V; Tj = 25 °C
VR = 600 V; Tj = 150 °C
Dynamic characteristics
Qr
recovered charge
IF = 30 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
IF = 30 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C; Fig. 7
IF = 30 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
IF = 30 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
IRM
peak reverse recovery IF = 30 A; VR = 200 V; dIF/dt = 200 A/
current
µs; Tj = 25 °C; Fig. 7
IF = 30 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
Min Typ Max Unit
-
1.38 1.8 V
-
-
10
µA
-
-
600 µA
-
50
-
nC
-
280 -
nC
-
-
35
ns
-
-
35
ns
-
70
-
ns
-
3.5 -
A
-
7.6 -
A
40
IF
(A)
30
003aak742
IF
dlF
dt
trr
20
(1)
(2)
(3)
10
0
0
1
2
3
VF (V)
Fig. 6. Forward current as a function of forward
voltage
time
25 %
Qr
100 %
IR
IRM
003aac562
Fig. 7. Reverse recovery definitions; ramp recovery
BYC30X-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 February 2013
© NXP B.V. 2013. All rights reserved
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