BYC30X-600P_15 Datasheet, PDF (3/9 Pages) NXP Semiconductors – Hyperfast power diode

NXP Semiconductors
BYC30X-600P
Hyperfast power diode
Symbol
I_FSM
T_stg
T_j
90
P_tot
(W)
60
30
Parameter
non-repetitive peak forward
current
storage temperature
junction temperature
Conditions
t_p = 10 ms; T_j(init) = 25 °C; sine-wave
pulse; Fig. 4
t_p = 8.3 ms; T_j(init) = 25 °C; sine-wave
pulse; Fig. 4
Min Max Unit
-
200 A
-
220 A
-65 175 °C
-
175 °C
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δ=1
0.5
0.2
0.1
60
P_tot
(W)
40
20
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a = 1.57
1.9
2.2
2.8
4.0
0
0
10
20
30
40
50
I_F(AV) (A)
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
0
0
10
20
30
I_F(AV) (A)
Fig. 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
40
I_F(AV)
(A)
30
51 °C
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10⁴
I_FSM
(A)
10³
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20
10
0
-50
0
50
100
150
200
T_h (°C)
Fig. 3. Forward current as a function of heatsink
temperature; maximum values
10²
I_F
I_FSM
10
10^-5
10^-4
t_p
t
T_j(init) = 25 °C max
10^-3
10^-2
t_p (s)
Fig. 4.
Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
BYC30X-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 February 2013
© NXP B.V. 2013. All rights reserved
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