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BYC15X-600P_15 Datasheet, PDF (5/9 Pages) NXP Semiconductors – Hyperfast power diode
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NXP Semiconductors
BYC15X-600P
Hyperfast power diode
Symbol
Parameter
Conditions
IF = 15 A; Tj = 150 °C; Fig. 5
IR
reverse current
VR = 600 V; Tj = 25 °C
VR = 600 V; Tj = 150 °C
Dynamic characteristics
Qr
recovered charge
IF = 15 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 6
IF = 15 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 6
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 6
IF = 15 A; VR = 400 V; dIF/dt = 500 A/
µs; Tj = 25 °C; Fig. 6
IF = 15 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 6
IF = 15 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 6
IRM
peak reverse recovery IF = 15 A; VR = 200 V; dIF/dt = 200 A/
current
µs; Tj = 25 °C; Fig. 6
IF = 15 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 6
30
IF
(A)
20
aaa-010688
IF
dlF
dt
(1)
(2)
(3)
10
Qr
Min Typ Max Unit
-
1.4 2
V
-
-
10
µA
-
-
1
mA
-
30
-
nC
-
115 -
nC
-
13
18
ns
-
22
-
ns
-
28
-
ns
-
39
-
ns
-
2.1 -
A
-
5.8 -
A
trr
time
25 %
100 %
0
0
1
2
3
4
VF (V)
Fig. 5. Forward current as a function of forward
voltage
IR
IRM
003aac562
Fig. 6. Reverse recovery definitions; ramp recovery
BYC15X-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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