BYC15X-600P_15 Datasheet, PDF (3/9 Pages) NXP Semiconductors – Hyperfast power diode

NXP Semiconductors
BYC15X-600P
Hyperfast power diode
Symbol
I_FSM
T_stg
T_j
50
P_tot
(W)
40
30
20
10
Parameter
non-repetitive peak forward
current
storage temperature
junction temperature
Conditions
t_p = 10 ms; T_j(init) = 25 °C; sine-wave
pulse; Fig. 3
t_p = 8.3 ms; T_j(init) = 25 °C; sine-wave
pulse; Fig. 3
Min Max Unit
-
180 A
-
200 A
-65 175 °C
-
175 °C
aaa-010684
δ=1
0.5
0.2
0.1
40
P_tot
(W)
30
20
aaa-010685
a = 1.57
1.9
2.2
2.8
4.0
10
0
0
5
10
15
20
25
I_F(AV) (A)
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
0
0
5
10
15
I_F(AV) (A)
Fig. 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
10⁴
I_FSM
(A)
10³
aaa-010687
10² _IF
I_FSM
t_p
t
T_j(init) = 25 °C max
10
10^-5
10^-4
10^-3
10^-2
t_p (s)
Fig. 3. Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; maximum values
BYC15X-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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