BUK953R2-40B_15 Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
BUK953R2-40B
N-channel TrenchMOS logic level FET
8. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 4
vertical in still air
1
Z_th(j-mb)
(K/W) δ = 0.5
0.2
10^{- 1}
0.1
0.05
0.02
10^{- 2}
Min Typ Max Unit
-
-
0.5 K/W
-
60
-
K/W
03nh37
P
δ=
t_p
T
single shot
10^{- 3}
10^{- 6}
10^{- 5}
10^{- 4}
10^{- 3}
10^{- 2}
t_p
t
T
10^{- 1}
1
t_p (s)
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V_(BR)DSS
drain-source
breakdown voltage
I_D = 0.25 mA; V_GS = 0 V; T_j = -55 °C
I_D = 0.25 mA; V_GS = 0 V; T_j = 25 °C
V_GS(th)
gate-source threshold I_D = 1 mA; V_DS = V_GS; T_j = 25 °C;
voltage
Fig. 10
I_D = 1 mA; V_DS = V_GS; T_j = 175 °C;
Fig. 10
I_D = 1 mA; V_DS = V_GS; T_j = -55 °C;
Fig. 10
I_DSS
drain leakage current V_DS = 40 V; V_GS = 0 V; T_j = 25 °C
V_DS = 40 V; V_GS = 0 V; T_j = 175 °C
BUK953R2-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
17 April 2014
Min Typ Max Unit
36
-
-
V
40
-
-
V
1.1 1.5 2
V
0.5 -
-
V
-
-
2.3 V
-
0.02 1
µA
-
-
500 µA
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 13