BUK953R2-40B_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

BUK953R2-40B
N-channel TrenchMOS logic level FET
17 April 2014
Product data sheet
1. General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
2. Features and benefits
• AEC Q101 compliant
• Low conduction losses due to low on-state resistance
• Suitable for logic level gate drive sources
• Suitable for thermally demanding environments due to 175 °C rating
3. Applications
• 12 V loads
• Automotive systems
• General purpose power switching
• Motors, lamps and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 5 V; T_mb = 25 °C; Fig. 2; Fig. 3 [1]
P_tot
total power dissipation T_mb = 25 °C; Fig. 1
Static characteristics
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 25 A; T_j = 25 °C
V_GS = 5 V; I_D = 25 A; T_j = 25 °C;
Fig. 11; Fig. 12
Dynamic characteristics
Q_GD
gate-drain charge
V_GS = 5 V; I_D = 25 A; V_DS = 32 V;
T_j = 25 °C; Fig. 13
Min Typ Max Unit
-
-
40
V
-
-
100 A
-
-
300 W
-
2.4 2.8 mΩ
-
2.7 3.2 mΩ
-
37
-
nC
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