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BUK7606-55B_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK7606-55B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see Figure 4
minimum footprint; mounted on a
printed-circuit board
Min Typ Max Unit
-
-
0.59 K/W
-
-
50 K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10â1 0.1
0.05
0.02
10â2
03nl97
P
tp
δ=
T
single shot
10â3
10â6
10â5
10â4
10â3
10â2
tp
T
10â1
tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7606-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 21 June 2010
© NXP B.V. 2010. All rights reserved.
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