BUK7606-55B_15 Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7606-55B
N-channel TrenchMOS standard level FET
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
V_DS
drain-source
T_j ≥ 25 °C; T_j ≤ 175 °C
voltage
-
-
55 V
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
[1]
-
-
75 A
see Figure 1; see Figure 3
P_tot
total power
T_mb = 25 °C; see Figure 2
dissipation
-
-
254 W
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C;
see Figure 11; see Figure 12
-
5.1 6
mΩ
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
I_D = 75 A; V_sup ≤ 55 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
-
-
680 mJ
Q_GD
gate-drain charge V_GS = 10 V; I_D = 25 A;
V_DS = 44 V; T_j = 25 °C;
see Figure 13
-
19 -
nC
[1] Continuous current is limited by package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
Simplified outline
G
gate
D
drain^[1]
mb
S
source
D
mounting base; connected to
drain
2
13
SOT404 (D2PAK)
[1] It is not possible to make connection to pin 2.
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK7606-55B
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
BUK7606-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 June 2010
© NXP B.V. 2010. All rights reserved.
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