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BUK7225-55A Datasheet, PDF (5/13 Pages) NXP Semiconductors – TrenchMOS standard level FET | |||
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Philips Semiconductors
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise speciï¬ed
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = â55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = â55 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;
Figure 7 and 8
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 â¦;
VGS = 10 V; RG = 10 â¦;
measured from drain to
centre of die
Ls
internal source inductance measured from source lead
to source bond pad
BUK7225-55A
TrenchMOS⢠standard level FET
Min
Typ
Max
Unit
55
â
â
V
50
â
â
V
2
3
4
V
1
â
â
V
â
â
4.4
V
â
0.05
10
µA
â
â
500
µA
â
2
100
nA
â
21
25
mâ¦
â
â
50
mâ¦
â
980
1310
pF
â
240
290
pF
â
150
210
pF
â
11
â
ns
â
56
â
ns
â
38
â
ns
â
31
â
ns
â
2.5
â
nH
â
7.5
â
nH
9397 750 08222
Product speciï¬cation
Rev. 01 â 17 April 2001
© Philips Electronics N.V. 2001. All rights reserved.
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