BUK7225-55A Datasheet, PDF (3/13 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7225-55A
TrenchMOS™ standard level FET
120
P_der
(%)
100
80
60
40
20
0
0
50
100
P_der = _P-------^P----^t--^o--^t------- × 100%
t o t ( 25 ^°C )
03aa16
150
200
T_mb (^oC)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
120
Ider
(%)
100
03aa24
80
60
40
20
0
0 25 50 75 100 125 150 175 200
Tmb (oC)
V_GS ≥ 4.5 V
I_der
=
-------^I---^D--------
I
×
100 %
D ( 25 ^°C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
103
ID
(A)
102
RDSon = VDS / ID
10
P
δ
=
tp
T
tp
t
T
1
1
D.C.
10
03ne70
VDS (V)
tp = 10 us
100 us
1 ms
10 ms
100 ms
102
T_mb = 25 °C; I_DM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08222
Product specification
Rev. 01 — 17 April 2001
© Philips Electronics N.V. 2001. All rights reserved.
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