BUK481-100A Datasheet, PDF (5/8 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product Specification
BUK481-100A
VGS / V
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
VDS / V =20
80
2
4
6
QG / nC
BUK481-100A
8
10
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); conditions: I_D = 1 A; parameter V_DS
IF / A
5
BUK481-100A
4
Tj / C = 150
25
3
2
1
0
0
0.5
1
1.5
VSDS / V
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
WDSS%
120
Normalised Avalanche Energy
110
100
90
80
70
60
50
40
30
20
10
0
20
40
60
80 100 120 140
Tamb/ C
Fig.15. Normalised avalanche energy rating.
W_DSS% = f(T_amb); conditions: I_D = 1 A
VGS
0
RGS
L
VDS
T.U.T.
+ ^VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
W_DSS = 0.5 ⋅ LI_D² ⋅ BV_DSS/(BV_DSS − V_DD)
January 1998
5
Rev 1.000